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NXP Semiconductors
9.1 BOD static characteristics
Table 9. BOD static characteristics [1]
T amb = 25 ° C.
LPC1111/12/13/14
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V th
threshold voltage
interrupt level 0
assertion
de-assertion
-
-
1.69
1.84
-
-
V
V
interrupt level 1
assertion
de-assertion
-
-
2.29
2.44
-
-
V
V
interrupt level 2
assertion
de-assertion
-
-
2.59
2.74
-
-
V
V
interrupt level 3
assertion
de-assertion
-
-
2.87
2.98
-
-
V
V
reset level 0
assertion
de-assertion
-
-
1.49
1.64
-
-
V
V
[1]
Interrupt levels are selected by writing the level value to the BOD control register BODCTRL, see LPC11xx
user manual .
9.2 Power consumption
X
(X)
X
X
X
X
X
X
<tbd>
001aac984
X
X
X
X
X
X (X)
Conditions: T amb = 25 ° C; active mode entered executing code from flash; core voltage 3.3 V; all
peripherals enabled but not configured to run.
LPC1111_12_13_14_0
Fig 8.
Supply current at different core frequencies in active mode
? NXP B.V. 2009. All rights reserved.
Objective data sheet
Rev. 00.11 — 13 November 2009
34 of 53
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